Description
VGF InP single crystal wafer
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Orientation: (100)
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Size: 2" diameter x 0.35mm
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Doping: Fe doped
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Conducting type: Semi-Insulating
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Resistivity: (1.96-5.15) E7 ohm.cm
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Mobility: 2200-2560 cmE2/V.s
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EPD: <5000 /cmE2
- Polish: one side polished
- EPI ready surface and packing
Other GaAs |
InSb
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Other InAs
|
InP |
GaSb
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Wafer Box
|
Film Coaters
|
RTP Furnaces
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