Description
InP single crystal wafer
- Orientation: (100)
- Size: 10x10 x 0.35 mm
- Doping: Un- doped
- Conducting type: N
- Polish: One side polished
- Mobility: 3500-4500cm^2/V.S
- EPD: <6000 /cm^2
- Carrier Concentration: 3x10 ^16 /cmE-3
Typical Properties
|
Dopant |
Type |
Carrier Concentration ( cm-3) |
Mobility ( cm2/V.Sec) |
Resistivity ( ohm-cm ) |
EPD (cm-2) |
|
Undoped |
N |
7.5-9.5 x1015 |
4300-4400 |
1.6E-1-4.5E-1 |
<5000 |
|
Sn |
N |
0.5 ~1.0 x1018 0.5 ~1.0 x1018 |
200 ~ 2400 1500 ~ 2000 |
0.001 ~ 0.002 0.0025~0.007 |
3~5 x104 |
|
Zn |
P |
0.8 ~ 2.0 x1018 2.5 ~ 4.0 x1018 |
2500 ~ 3500 1300 ~ 1600 |
0.0025 ~ 0.006 |
1~ 3 x104 |
|
Fe |
Semi-Insulating |
N/A |
1550-1640 |
(2.1-2.7) x107 |
<5000 |
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|