Description
InP single crystal wafer
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Orientation: (100)
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Size: 2" diameter x 0.35 mm
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Doping: Un- doped
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Conducting type: S-C
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Polish: Two sides polished
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Resistivity: (2.48-3.34)10^-1 ohm.cm
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Mobility: 4250-4340cm^2/V.S
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EPD: <5000 /cm^2
- Carrier Concentration: (4.34-5.91) ^15 /cmE-3
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|