Description
Fearures:
- Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties .
- Wafer size: 10 x 10 x 0.5 mm thick
- Orientation: (10-14) +/-0.5 o
- Polished surface : S ubstrate surface is EPI polished via a special CMP procedure with RA < 5 A
- 1 side polished
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
- Quantity discount will be applied automatically before checkout
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C Density: 3.97 gram/cm 2
- Growth Technique: CZ
- Crystal Purity: >99.99% Hardness: 9 ( mohs)
- Thermal Expansion : 7.5x10 -6 ( / o C)
- Thermal Conductivity : 46.06 @ 0 o C, 25.12 @ 100 o C, 12.56 @ 400 o C ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10 -5 at A axis , <5 x10 -5 at C axis