Description
Fearures : Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties . Wafer size: 0.06"x0.25", X-tal Orientation : Polished surface : Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container. Quantity discount will be applied automatically before checkout Typical Properties: Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms, Melting Point: 2040 degree C Density: 3.97 gram/cm 2 Growth Technique: CZ crystal purity: >99.99% Hardness: 9 ( mohs) Thermal Expansion : 7.5x10 -6 ( / o C) Thermal Conductivity : 46.06 @ 0 o C 25.12 @ 100 o C, 12.56 @ 400 o C ( W/(m.K) ) Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis Loss Tangent at 10 GHz: < 2x10 -5 at A axis , <5 x10 -5 at C axis
