Description
Specifications
| Epitaxial thin Film Composition | <100> CeO2 |
| Epitaxial Film Thickness | 40 nm +/- 10 nm |
| Growth method | Spin coating |
| Epitaxial FWHM | < 5 o |
| Substrate | <100>, YSZ, 10x10x0.5 mm, one side polished |
| Package | Sealed in Vacuum in a plastic box and bag |
| Typical XRD and Rocking curve (click thumb pic to enlarge ) |
 
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| Target A-Z |
Crystal Substrate A-Z |
Plasma/UO Cleaner |
Round Wafer Carriers |
Cutting/Dicing Saws |
Film Coaters |