Diamond on Oxide Wafer(DOI), 5 mm x 5 mm, 2um Thick, 10nm Ra

Specifications

• Film: UNCD (Ultra nanocrystalline Diamond)
• Wafer Size: 5x5x0.5mm
• Si wafer Orientation: (100) + / - 0.5^o
• Insulating Layer:  SiO2
• Diamond film thickness:  2 microns, undoped
• Oxide Layer: 1 micron
• Estimated Resistivity: ~ 10E5 ohm-cm
• Surface Roughness:   as grown ,  RA < 10 nm
•  Package: One 1000 class clean room with 100 class plastic bag

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