GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3
  • GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 1sp,cc: (1.65-3.92) x 10^18 /cm^3

SKU: gaas-growing-method-vgf-100-si-doped-n-type-2-dia-x-0-35mm-1sp-cc-1-65-3-92-x-10-18-cm-3

Price: RFQ

Description
  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)
  • Size: 2" dia x 0.35mm
  • Polishing: One side polished
  • Doping: Si doped
  • Conductor type: N-type
  • Carrier Concentration: (1.65 - 3.92) x 10^18 /cm^3
  • Mobility: 1440 - 2270 cm^2/V.S
  • Resistivity: (1.01 - 1.90) E-3  ohm.cm
  • EPD: < 500 cm^2
  • Ra(Average Roughness) : < 0.4 nm
  • EPI ready surface and packing


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