Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 10x10 x 0.5mm
- Polishing: one side polished;
- Ra(Average Roughness): < 0.4 nm
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity: (0.65-3.24)E8 Ohm.cm
- Mobility: 4700-5630cm^2/v.s.
- EPD: <5000/cm2
