Description
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GaAs single crystal wafer
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Growing Method: VGF
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Orientation: (100)
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Size: 10x5 x 0.5mm
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Polishing: two sides polished;
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Ra(Average Roughness): < 0.4 nm
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Doping: undoped
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Conductor type: Semi-Insulating
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Resistivity: (0.6-2.0)E8 Ohm.cm
- Mobility: 5350-6380 cm^2/v.s.
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EPD: <5000/cm2