Description
- GaAs single crystal wafer
- Growing Method: VGF Orientation: (110)
- Size: 100mm dia x 0.5mm
- Polishing: One side polished
- Doping: Un-doped
- Conductor type:S-I
- Carrier Concentration: N/A
- Mobility: 5260-6180cm^2/V.S
- Resistivity : (1.05-3.03)x10^8ohm.cm
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
