Description
- GaP single crystal wafer,
- Size: 2" diameter(+/_0.15mm) x 0.5mm(+/_ 0.05mm),
- Doping: S-doped,
- Conducting type: N-type,
- Orientation: (111)+_30'
- Edge Orientation: (110)±1°
- Polished:Both sides polished.
- Surface finish (RMS or Ra) : < 8A
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Typical Physical Properties |
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Crystal Structure |
Cubic. a =5.4505 ?‡3 |
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Growth Method |
CZ (LEC) |
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Density |
4.13 g/cm3 |
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Melt Point |
1480 oC |
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Thermal Expansion |
5.3 x10-6 / oC |
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Dopant |
S doped |
undoped |
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Crystal growth axis |
<111> or <100> |
<100> or <111> |
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Conducting Type |
N |
N |
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Carrier Concentration |
2 ~ 8 x1017 /cm3 |
4 ~ 6 x1016 /cm3 |
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Resistivity |
~ 0.03 W-cm |
~ 0.3 W-cm |
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EPD |
< 3x105 |
< 3x105 |
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