Description
- High quality GaSb single crystal wafers for semiconductor industries.
- Size: 2" diameter x 0.45mm,
- Orientation: (100)
- Dopping: Zn- doped,
- Conducting type: P-type.
- Carrier concentration: (5.8)x10^18 cm^-3
- Resistivity: 3.9 x10^-3 ohm.cm
- EPD: < 2x 10^3 cm ^-2
- Mobility: 270 cm^2/V.S
- Polish: one side polished.
- Grown by a special LEC technique
- Surface finish (RMS or Ra) : < 5A
Typical Properties
- Crystal Structure: cubic a = 6.095 Å
- Density: 5.619 g/cm3
- Melting point: 10 oC
- Thermal Expansion: 6.1 x 10 -6 /oK
- Thermal conductivity: 270 mW / cm.k at 300K
|
Dopant |
Type |
Carrier Concentration |
Mobility |
Resistivity |
EPD |
|
Undoped |
P |
1.0~2.0 x 1017 |
600 ~ 800 |
~0.1 |
<10000 |
|
Zn |
P+ |
1.0~3.0 x 1017 |
200 ~ 500 |
~0.004 |
<10000 |
|
Te |
N |
2.0~6.0 x 1017 |
2500 ~ 3500 |
~0.05 |
<10000 |
|
High Resistivity |
P or N |
1.0~2.0 x 1016 |
460 |
~ 1.0 |
<100 |
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|