Description
Wafer Specifications:.
-
Size: 10x10 x 0.5mm,
-
Orientation: (100)
-
Dopping: undoped,
-
Conducting type: P-type.
-
Polish: one side polished by CMP
- Packing: 1000 class clean room in a single wafer container
Typical Properties
- Crystal Structure: cubic a = 6.095 Å
- Density: 5.619 g/cm3
- Melting point: 710 oC
- Grown by a special LEC technique , EPD :<10^4/cm2.
- Carrier concentration: ( 1-2)x10^17 cm^-3
- Mobility: 600-700 cm^2/Vs
- EPD: <3000 cm^-2
- Thermal Expansion: 6.1 x 10 -6 /oK
- Thermal conductivity: 270 mW / cm.k at 300K
|
Dopant |
Type |
Carrier Concentration ( cm-3) |
Mobility ( cm2/V.Sec) |
Resistivity ( ohm-cm ) |
EPD (cm-2) |
|
Undoped |
P |
1.0~2.0 x 1017 |
600 ~ 800 |
~0.1 |
<10000 |
|
Zn |
P+ |
2.0~5.0 x 1018 |
300 ~ 500 |
~0.004 |
<10000 |
|
Te |
N |
2.0~6.0 x 1017 |
2500 ~ 3500 |
~0.05 |
<10000 |
|
High Resistivity |
P or N |
1.0~2.0 x 1016 |
460 |
~ 1.0 |
<10000 |
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|