Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm

Specifications

• Growth method: CZ
• Wafer size: 10x5 x0.5 mm
• Surface polishing: two sides epi polished
• Orientation: (100) 
• Surface roughness:  RMS or Ra: ~ 10 A (by AFM) 
• Doping: Drugged with Sb
• Conductor type: Type N
• Resistivity: 0.01-0.05 Ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters