Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm

Specifications

• Growing Method: CZ
• Wafer Size: 10x10x0.5 mm
• Surface Polishing: one side optical polished
• Orientation: (110) +/- 0.7 degree
• Surface finish (RMS or Ra) :  < 30A
• Doping: Sb-doped
• Conductor type: N-type
• Resistivity: 0.1-0.5 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• EPD: N/A
• Package: under 1000 class clean room  in wafer container   

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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