Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm

Ge Wafer Specification

• Growing Method: CZ
• Orientation: (100) +/-2.5 Deg.
• Wafer Size: 2" dia x  500 microns  
• Surface Polishing: one side epi polished
• Surface roughness: RMS or Ra: ~ 10 A ( by AFM)
• Doping: Undoped
• Conductor type: N-type
• Resistivity: 0.001-0.01 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
  Package: under 1000 class clean room      
   

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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