Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US

Specification

• Growing Method: CZ
• Orientation: (100) +/-0.5 Deg.
• Wafer Size: 2" dia x  1000 microns  
• Surface Polishing: one side epi polished
• Surface roughness: < 8 A ( by AFM)
• Doping: Sb Doped
• Conductor type: N-type
• Resistivity: 0.02 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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