Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US

Specification

• Growing Method: CZ
• Orientation: (110) +/_0.5 Deg
• Wafer Size: 2" dia x  500 microns  
• Surface finish (RMS or Ra) : One side optical polished < 30A
  
• Doping: Sb doped
• Conductor type: N-type
• Resistivity: 0.1-0.5 ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters