Ge Wafer (111) 4" dia x 0.5 mm, 1SP, N type ( Sb- doped) with resistivities: 0.014-0.022 Ohms-cm

Specification

• Growing Method: CZ
• Orientation: (111) +/-0.5 Deg.
• Wafer Size: 4" dia x  500 microns  
• Surface Polishing: One   side  epi polished
• Surface roughness: < 30 A ( by AFM)
• Doping: Sb- Doped
• Conductor type: N-type
• Resistivity: 0.014-0.022 Ohm-cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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