Description
- Growth method: LEC
- Orientation: (100)
- Orientation Flat: N/A
- Doping: S-doped
- Conductivity type: N type
- Carrier Concentration: 1x10E18 cmE-3
- Mobility: 9000 cm2/V.S
- Standard thickness: 0.5mm
- Standard size: 10mm x 10mm
- Polish: one-side
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|