InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US

InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US

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InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US
  • InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US
InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US

InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US

SKU: inas-100-s-doped-2-dia-x-0-5-mm-one-side-polished-cc-1-30e17-cm-3-iasa50d05c1us

Price: RFQ

Description
  • 2" InAs wafer: (Ntype) 
  • 2" InAs wafer: (S-doped, Ntype)
  • Size:  2" dia x 500 micron +/-25 microns
  • Orientation: <100> +/-0.5 0
  • Polishing: One-side polished
  • Packing: in 1000 class clean room with wafer container
  • Properties Growth method: LEC
  • Orientation:  (100)  +/- 0.5 o
  • Orientation Flat:  SEMI
  • Doping:  S-doped
  • Conductivity type: N type
  • Carrier Concentration: (1-30)x 10^17/ cm 3
  • EPD: <50000 cm^-2
  • Resistivity: Mobility: <10000 cm^2/vs