Description
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InAs wafer: (Undoped, N type)
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Size: 5x5x0.45mm
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Orientation: <100> +/-0.50
- Polishing: two sides polished
- Growth Method: LEC
- Major Flat Orientation: <110>
- Minor Flat Orientation: <-110>
- Mobility: (20000-22000) cm^2/V.s
- Carrier Concentration: < 2.1 E16 cm^-3
- EPD: <30000 /cm^2
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Packing: in 1000 class clean room with wafer container
Other GaAs |
InSb
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Other InAs
|
InP |
GaSb
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Wafer Box
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Film Coaters
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RTP Furnaces
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