Description
InP single crystal wafer
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Growing Method: VGF
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Orientation: (100)
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Size: 2" diameter x 0.35 mm
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Doping: Sn- doped
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Conducting type: S-C-N
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Polish: one side polished
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Resistivity: (2.82-2.99)x10^-3 ohm.cm
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Mobility: 2170-2220 cmE2/V.S
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EPD: <5000 /cmE2
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Carrier Concentration: (9.62-9.99) x10^17 /cm^3
- Ra(Average Roughness) : < 0.4 nm
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EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|