InSb (100) 10x10x 0.5mm, Undoped, N type, 2 sides polished

  InSb   substrate     (N type, undoped) 2sp

• Size: 10 x 10 x 0.5 mm
• Orientation:<100> +/-0.5^o 
• Polishing:  both-sides epi-polished 
• Packing: Sealed under nitrogen with single wafer container  in 1000 class clean room

Properties

• Growth method: LEC
• Orientation:  (100)  +/- 0.5^o                                     
• Doping: Undoped
• Conductivity type:  N type
• Carrier Concentration: (2-7)E14 @77K
• Mobility: 4E4 cm²/Vs
• EPD: <300 / cm ²

Optional:  
you may need tool below to handle the wafer ( click picture to order )

Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers

 

 

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