InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US

InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US

RM0.00 MYR
RM0.00 MYR
Skip to product information
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US
  • InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US

InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US

SKU: insb-100-2-dia-x-0-45-mm-p-type-ge-doped-1-sided-polished-carrier-conc-0-5-5-0x10-17-cc-isgea50d045c1us

Price: RFQ

Description

2" InSb wafer (P type, Ge doped )

  • Size: 2" dia x 0.45mm  thick
  • Orientation: <100> +/-0.5 o
  • Polishing: one side  polished
  • Packing: Sealed in nitrogen in single wafer container  at 1000 class clean room

Properties

  • Growth method: LEC
  • Orientation: (100)  +/- 0.5 o
  • Orientation Flat:  N/A                         
  • Doping:  Ge
  • Conductivity type: P Type
  • Carrier Concentration: (0.5-5.0) x10^17/cc @77K
  • Mobility: > (4.0-8.4)x10^3 cm2/Vs
  • EPD: <200  / cm 2

     

Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coaters

 RTP Furnaces