Description
InSb substrate (N type, undoped) 2sp
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Size: 5x5 x 0.5 mm
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Orientation: <100> +/-0.5o
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Polishing: both-sides epi-polished
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Packing: Sealed under nitrogen with single wafer container in 1000 class clean room
Properties
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Growth method: LEC
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Orientation: (100) +/- 0.5o
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Doping: Undoped
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Conductivity type: N type
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Carrier Concentration: (2-7)E14 @77K
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Mobility: 4E4 cm2/Vs
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EPD: <300 / cm 2
Optional:
you may need tool below to handle the wafer ( click picture to order )
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