LaAlO3, (100) ori 10x10x1.0 mm substrate, 2 side EPI polished - LAOa101010S2

LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well-suitable for low-loss microwave and dielectric resonance applications.

Substrate Specifications:

• Wafer Size:     10 x 10 x 1.0 mm thickness +/-0.05 mm,
• Wafer Orientation:   (100) +/-0.5 Deg 
• Polishing:   Two sides CMP polished with free sub-surface damaged. 
• Surface finish (RMS or Ra) :  < 10A
• Package:    Under 1000 class clean room, and in 100 grade plastic bag in a wafer container.
• Lattice Constant   a=3.792Å Pseudocubic
• Warning:     LaAlO3 crystal has a visible twin on a polished surface, which is of normal nature., please picture below