LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1

LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1

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LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1

LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1

SKU: lsat-110-2-x0-5-mm-wafer-1-side-epi-polished-lsate50d05c1

Price: RFQ

Description

LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7   is a newly developing crystal with a perovskite structure and is twin-free.  LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and  can be grown by CZ technology at a lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro-electronic and superconductive devices
 

Substrate Specifications:

  • Size:  2" Dia. +/-0.5 mm x 0.5 mm +/-0.05 mm
  • Orientation:     <110> +/-0.5 Deg
  • Surface Roughness:   CMP polished with min. sub-surface damage, and Ra < 10 A
  • Package:   Packing in 1000 class clean room  with a 100-grade clean plastic bag
  • Click here to view SDS

 

Typical Physical Properties

Chemical Formula

( LaAlO3)0.3 (Sr2AlTaO6)0.7    or  ( La0.18Sr0.82)(Al0.59Ta0.41)O3

Crystal Structure

cubic:             a = 3.868  Å 

Growth Method

Czochralski

Density

6.74   g/cm3

Melt Point

1840  oC        

Thermal expansion

10 (x10-6oC)

Dielectric Constant

~ 22

Color and Appearance

Colorless to light brown based on annealing condition.   No twin and domain visible

Standard Products

Epi-polished substrates

<100>ori. ± 0.5o

1or 2 sides polished

Ra < 8 Å

 
 2" dia x 0.5 mm  

10 x 10 x 0.5mm    Special size and orientation is available upon request

 5 x 5 x 0.5 mm


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