Description
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications
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Semi-Insulating GaN Epitaxial Template on Sapphire (C plane)
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Sizes: 3” Round
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Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o
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Conduction Type: n-type,undoped
- Typical Macro Defect Density:< 5cm-2
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Resistivity:>10^6 Ohm-cm
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Front Surface Finish (Ga Face) As-grown
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Back Surface Finish Sapphire as-received finish
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Useable Surface Area >90%
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Edge Exclusion Area 1mm
Typical Macro defect Density: <5cm^-2 -
Package Single Wafer Container
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GaN layer thickness 5 microns , (+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50um area
Related data
- Please click here to see XRD Rocking curve of GaN template
- Please click here to see Dislocation vs Thickness of GaN template
- Please click here to see RMS of GaN template
