Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

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RM0.00 MYR
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Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm
  • Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm
Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

SKU: si-wafer-111-4-dia-x-0-3-mm-n-type-p-doped-1sp-resistivities-15-000-25-000-ohm-cm

Price: RFQ

Description

 Single Crystal:          Si Growth Method:       FZ (Floating Zone) Type/Dopant:           N/Phosphorus Orientation:             (111) Resistivity:               15,000 - 25,000 ohm-cm Diameter:                100 mm +/- 0.5 mm Thickness:               0.3 mm +/- 0.025 mm Primary Flat:            <110> Polish:                     One side polished Optional:  you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater