Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

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Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm
  • Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm
Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm

SKU: si-wafer-111-4-dia-x-0-3-mm-n-type-p-doped-1sp-resistivities-15-000-25-000-ohm-cm

Price: RFQ

Description
  • Single Crystal:          Si   
  • Growth Method:       FZ (Floating Zone)
  • Type/Dopant:           N/Phosphorus
  • Orientation:             (111) 
  • Resistivity:               15,000 - 25,000 ohm-cm
  • Diameter:                100 mm +/- 0.5 mm
  • Thickness:               0.3 mm +/- 0.025 mm
  • Primary Flat:            <110>  
  • Polish:                     One side polished


Optional:  you may need tool below to handle the wafer ( click picture to order )

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