Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

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Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

SKU: si-wafer-111-miscut-0-0-5-degree-4-dia-x-0-525-mm-1sp-p-type-b-doped-resistivities-1-10-ohm-cm

Price: RFQ

Description

  • Single crystal               Si,   
  • Conductivity:               P type ( B doped)
  • Resistivity:                1-10 ohm-cm   (If you would like to measure the resistivity accurately, 
                                         please order our Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                            4" diameter x 0.525 mm
  • Orientation:               (111) miscut  0+/-0.5 degree,
  • Polish:                          One side polished
  • Surface roughness, Ra:       < 5A (RMS) 

Optional:  you may need tool below to handle the wafer ( click picture to order )

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