Description
Specifications of Substrate
- Orientation: <0001> +/-0.5
- Dimension: 8mm Dia.x 0.3mm
- Polished: One side epi polished
- Surface Roughness: < 10 A by AFM
Typical Properties of Single Crystal SiC
- Formula weight: 40.10
- Unit Cell: Hexagonal
- Lattice constant: a =3.08 A c = 15.117 A
- Stacking sequence: ABCACB (6H)
- Growth Technique: MOCVD
- Polishing: Silicon face polished
- Band Gap: 3.03eV ( Indirect)
- Conductivity type: N
- TTV/Bow/Warp:<25um
- Micropipe Density: <30 cm^-2
- Resistivity: 0.020~0.200 ohm-cm
- Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- Thermal Conductivity @ 300K: 5 W / cm . K
- Hardness: 9 Mohs
Related Product
| ZnO | SiC | GaN | Sapphire |
 |
 |
 |
 |
| Dicing saw | AlN template | Wafer Carriers | Film Coater |
 |
 |
 |
 |