Description
Silicon Wafer Specifications:
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Film: SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,4"x0.525mm,1sp
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SiO2=300nm
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Ti=10nm
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Pt(111)=150nm
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- Resistivity: 1-20 ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Substrate Size: 4" diameter +/- 0.5 mm x 0.525 mm
- Polish: one side polished
- Surface roughness: < 20 A RMS
- Maximum Thermal Budget of Pt/Ti film-coated SiO2/Si wafers: < 650-700 C/ 1 hr in air