Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US

Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US

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Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US
  • Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US
Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US

Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US

SKU: thermal-oxide-wafer-100-nm-sio2-layer-on-si-100-4dia-x-0-525-mm-n-type-p-doped-1sp-r-0-1-1-0ohm-cm-fm100soonsipa100d0525c1r01us

Price: RFQ

Description

 Thermal oxide Layer Research Grade , about 80 % useful  area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 100 nm   ( 1000A)  +/-10% for each side ( coatd on both sides ) Refractive index - 1.455 Silicon Wafer

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