Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2 layer on 4'' Silicon wafer
• Oxide layer thickness: 100 nm   ( 1000A)  +/-10%  for each side  ( coatd on both sides )
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          N-type/ P-doped 
• Resistivity:                  0.1-1.0  ohm.cm   (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                         4" +/- 0.5 mm x 0.525 mm
• Orientation:                (100) +/- 1^o
• Polish:                        one side polished
• Surface roughness, Ra: < 5A (RSM) 

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