Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

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Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm
  • Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm
Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

SKU: thermal-oxide-wafer-1000-nm-sio2-layer-on-si-100-4dia-x-0-525-mm-t-ptype-1sp-r-1-20-ohm-cm

Price: RFQ

Description

 Thermal oxide Layer Research Grade , about 80 % useful  area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 1000 nm   ( 10000A)  +/-10% Refractive index - 1.455 Silicon Wafer

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