Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm

Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm

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Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm
  • Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm
Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm

Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm

SKU: thermal-oxide-wafer-50-nm-sio2-on-si-100-5x5-x-0-5-mm-n-type-p-doped-1sp-r-0-01-0-05-ohm-cm

Price: RFQ

Description

 Thermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 50 nm   ( 500A)  +/-10% Refractive index - 1.455 Silicon Wafer

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