VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

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VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3
  • VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3
VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

SKU: vgf-gaas-100-n-type-si-doped-2-dia-x-0-5-mm-1sp-cc-0-63-1-17-x-10-18-cm-3

Price: RFQ

Description
  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)
  • Size: 2" dia x 0.5mm
  • Polishing: One  side polished
  • Doping: Si doped
  • Conductor type: N-type
  • Carrier Concentration: (0.63 - 1.33) x 10^18 /cm^3
  • Mobility: (2170 - 2920) cm^2/V.S
  • Resistivity: (2.12 - 3.55) E-3  ohm.cm
  • EPD: < 5000cm^2
  • Ra(Average Roughness): < 0.4 nm
  • EPI ready surface and packing 


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