VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm

Specification

• Growing Method: VGF
• Orientation: (100) +/-0.5 Deg.
• Wafer Size: 100mm dia x  500 microns  
• Surface Polishing: One side epi polished
• Surface roughness: RMS or Ra:~ 10 A(By AFM) 
• Conductor type: N-type
• Dopant: As-Doped
• Resistivity: 0.088-0.25ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier concentration: (0.78-3.02)x10^16/c.c
• Mobility: 2350-3010 cm^2.v.s
• EPD: < 500 /cm^2
• Ra(Average Roughness) : < 0.4 nm                      
• Package: under 1000 class clean room  

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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