VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm

Specification

• Growing Method: VGF
• Orientation: (100) +/-0.5 Deg.
• Wafer Size: 100mm dia x  500 microns  
• Surface Polishing: Two sides epi polished
• Surface roughness: RMS or Ra:~ 10 A(By AFM)
• Doping: As- Doped
• Conductor type: N-type
  
• Resistivity: 0.173-0.25 ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier concentration: 0.09x10^17 -1.63x10^17/c.c
• Mobility: 1660-2940 cm^2.v.s
• EPD: < 500 /cm^2
• Ra(Average Roughness) : < 0.4 nm
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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