VGF-Ge Wafer (100) with 6 degree miscut toward <111> , 100 mm dia x 0.5 mm, 1SP, P type (Ga doped), R: 0.3-0.33 Ohm.cm - GEGaa100D05C1deg6VGFR03US

Specification

• Growing Method: VGF
• Orientation: VGF-Ge Wafer (100) with 6 degree miscut toward<111>
• Wafer Size: 100 mm  dia x  500 microns  
• Surface Polishing: One side polished
• Surface roughness: < 8 A ( by AFM)
• Doping: Ga Doped
• Conductor type: P-type
• Resistivity: 0.3-0.33 ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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