Description
InP single crystal wafer
- Orientation: (100)
- Size: 2" diameter x 0.35 mm
- Doping: Undoped
- Conducting type: S-C
- Polish: one side polished
- Resistivity: (2.59-3.8) x 10^-1 ohm.cm
- Mobility: (4100-4350) cm^2/V.S
- EPD: <5000 /cm^2
- Carrier Concentration: (3.78-5.59) x 10^15 /cmE-3
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
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