Description
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VGF InP single crystal wafer Orientation: (110)
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Size: 2" diameter x 0.5mm
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Doping: Fe doped
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Conducting type: Semi-Insulating
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Resistivity: (1.54-4.02)E7 ohm.cm
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Mobility: 1730-2230 cmE2/V.s
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EPD: <5000 /cmE2
- Polish: two sides polished
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|
|
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|